VULCAN™ High-K & Dielectrics Overview

VESTA Technology introduce next generation Nano-ALD system, the first production-proven single wafer ALD tool for DRAM capacitors and Logic gate applications. ALD technology utilizes a surface-controlled reaction for layer-by-layer deposition of thin films at the atomic level. The surface-controlled growth mechanism of ALD provides excellent step coverage and densified films without defects at extremely low temperatures. VESTA's VULCAN™ High-K & Dielectrics ALD System uses a high reliable platform for precise wafer handling, and automated computer control specialized reactor for atomic layer deposition. It overcomes the biggest challenge of PVD, CVD and sub-0.18 micron device manufacturing. VESTA's VULCAN™ High-K & Dielectrics ALD system is a cluster tool capable of configuration up to four (4) process modules with easy scale from 200mm to 300mm system. VESTA's VULCAN™ High-K & Dielectrics ALD system uses new techniques for deposition of High-K Capacitor, High-K Gate, EBL, Metal, Barrier Metal, Top Electrode for Capacitor and Capacitor layer.

VULCAN™ High-K & Dielectrics ALD Features

- SEMI-standard single wafer ALD process modules : high-k dielectrics / Barrier metals
- 200, 300mmwafer sizes, and 200/300mm bridge tool
- 200 - 600°C deposition temperatures
- Showerhead type reactor for physically uniform films
- Ozone-based high-k dielectrics deposition (H₂O, Plasma option)
- Thermally deposited barrier metals
- Uniformity: < 1.5% within wafer and < 1.0% wafer-to-wafer

Semiconductor Applications

Non-Semiconductor Applications